Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) represent a critical advancement in semiconductor technology, integrating a silicon base with germanium to markedly enhance frequency ...

We’re only 7 years from the next evolution in transistors ...

Thinking of transistors for mobile electronics? Researchers have developed silicon-germanium (SiGe) transistors with record-setting performance, low energy consumption-and no manufacturing cost ...

Because of the ubiquity of television in the modern world, practically everyone is aware of the rapid and stunning advances in TV technology over the last decade. During The last 10 years, common ...

Georgia Tech scientists and engineers are pursuing the dictum that “smaller is better” to develop a new breed of highly-integrated silicon-based microchips capable of operating in ultra-sophisticated ...

Scientists have developed the first electrically pumped continuous-wave semiconductor laser composed exclusively of elements from the fourth group of the periodic table -- the 'silicon group'. Built ...

A strained germanium epilayer on silicon achieves a record hole mobility, enabling faster low-power electronics and scalable quantum-ready semiconductor platforms. (Nanowerk News) Most modern ...

A five-year project led by the Georgia Institute of Technology has developed a novel approach to space electronics that could change how space vehicles and instruments are designed. The new ...

Scientists in Germany have developed a new silicon-germanium chip that achieves the world’s highest ...

We’ve covered the Tiny Tapeout project a few times on these pages, and while getting your digital IC design out there onto actual silicon for a low cost is super cool, it is still somewhat limited.