Latest 2300 V, 8 mΩ full-bridge SiCPAK™ G power module leverages proprietary GeneSiC™ Trench-Assisted Planar™ technology to deliver the ...

Gallium nitride (GaN) and silicon carbide (SiC) power semiconductor firm Navitas Semiconductor Corp of Torrance, CA, USA has announced an ultra-high-voltage (UHV) SiC power module family for advanced ...

V SiC technology targets higher efficiency and power density in AI data centers, energy storage, and grid applications.

Navitas Semiconductor Corporation announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure. The new G4H08MT23GB4 2300 V full-bridge module family uses ...

The vulnerability of PERC modules to LID and LeTID is well known and among the reasons the industry is moving towards N-type technology, which tends to be less affected by the two phenomena. TUV Nord ...

Damage to a relay contact after cyclic current loading. A better understanding of inverter reliability will help boost performance and reduce costs. Image: Fraunhofer IMWS. Inverters are critical to ...

French testing and certification laboratory Certisolis has released initial results from accelerated degradation testing conducted under its Optisol program, highlighting performance gaps TOPCon solar ...

Navitas Semiconductor (Nasdaq: NVTS), a leader in next-generation power semiconductors and power delivery solutions, pioneering GaN, high-voltage and ultra-high-voltage SiC, and IVR technologies, ...